A Electrical Behavior Of Total Ionizing Dose Impacts On Hfo2And Al2o3 Gate Oxide Soi Finfet

Abstract

This study analyses how different gate oxides used in silicon on insulator (SOI) FinFETs are affected by total ionising radiation (TID). The device under consideration has a threedimensional (3-D) SOI 30nm n-channel FinFET architecture with gate electrodes made of
high-k hafnium oxide (HfO2) and aluminium oxide (Al2O3). Utilizing radiation-specific code for various gate oxides, 3-D simulations of the FinFET device were run in Visual TCADto examine the impact of TID on the device. The TID effects change the electrical
characteristics, causing the device to deteriorate and the systems connected to it to fail.It has been discovered that the trapped charge density of oxide is more than that of interface. The leakage current and transconductance after irradiation rise as a result of
TID. For both gate oxide materials, it has been found that the threshold voltage shifts as the ionising radiation exposure increases